t4 - lds - 0313 -1, rev . 1 ( 10/8/13 ) ?201 3 microsemi corporation page 1 of 4 2n49 57 ub compliant surface mount pnp silicon vhf - uhf a mplifier t ransistors qualified per mil -prf- 19500/ 426 qualified levels : jan, jantx, and jantxv description the 2n 4957 ub is a mili tary qualified silicon pnp amplifier transistor designed for vhf - uhf equipment and other high - reliability applications . common a pplications include high gain low noise amplifier; oscillator, and mixer applications. it is also available in a low - profile to - 72 leaded package. ub package also available in : to - 72 package ( leaded top hat ) 2n49 57 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n4957 ? jan, jantx, and jantxv military qualified versions are available per mil - prf - 19500/426 (see part nomenclature for all available options) ? rohs co mpliant applications / benefits ? low - power, ultra - high frequency transistor ? leaded m etal to - 72 package m axim um ratings @ t a = + 25 o c msc C lawrence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to +200 o c collector - emitter voltage v ceo - 30 v collector - base voltage v cbo - 30 v emitter - base voltage v ebo -3 v total power dissipation (1) p t 200 mw collector current i c -30 ma notes : 1. derate linearly 1.14 mw/c for t a > +25 c downloaded from: http:///
t4 - lds - 0313 -1, rev . 1 ( 10/8/13 ) ?201 3 microsemi corporation page 2 of 4 2n49 57 ub mechanical and packaging ? case: ceramic ? terminals: gold p lating ove r n ickel underplate ? marking: part numbe r, date code, manufacturers id ? polarity: pnp, see case outline on last page ? tape & reel option: standard per eia - 418d . consult factory for quantities ? weight: < 0.04 g rams ? see p ackage d imensions on last page. part nomenclature jan 2n4957 ub reliability level jan=jan level jantx=jan level jantxv=jantxv level blank = commercial jedec type number ( see electrical characteristic s t able ) surface mount p ackage symbols & definitions symbol definition i b base current: the value of the dc current in to the base terminal. i c collector current: the value of the dc current in to the collector terminal. i e emitter current : the value of the dc current into the emitter terminal. t a ambient temperature: the air temperature measured below a device, in an environment of substantially unifor m temperature, cooled only by natural air convection and not materially affected by reflective and radiant surfaces. t c case temperature: the temperature measured at a specified location on the case of a device. v cb collector - base voltage: the dc voltage between the collector and the base. v cb o collector - base voltage, base open : the vo ltage between the collector and base terminals when the emitter terminal is open - circuited . v ce o collector - emitter voltage, base open : the voltage between the collector and the emitte r terminals when the base terminal is open - circuited. v eb emitter - base voltage: the dc voltage between the emitter and the base . v eb o emitter - base voltage, collector open : the voltage between the emitter and base terminals with the collector terminal open - circuited. downloaded from: http:///
t4 - lds - 0313 -1, rev . 1 ( 10/8/13 ) ?201 3 microsemi corporation page 3 of 4 2n49 57 ub electrical characteristics @ t c = +25 o c off char acteristics test conditions symbol value min. max. unit collector - emitter breakdown voltage i c = -1 .0 ma, i b = 0, bias condition d v (br)ceo - 30 - v collector to base cutoff current v cb = - 20 v, i e = 0, bias condition d v cb = - 30 v, bias conditi on d i cbo - - 100 - 100 na a emitter to base cutoff current v eb = -3 v, bias condition d i ebo - - 10 0 a on characteristics test conditions symbol value min. max. unit forward current transfer ratio i c = - 0.5 ma, v ce = -10 v i c = - 2.0 ma, v ce = -10 v i c = - 5.0 ma, v ce = -10 v i c = - 5.0 ma, v ce = -10 v , t a = - 55 oc h fe 15 20 30 10 1 65 dynamic characteristics test conditions symbol value unit min. max. magnitude of common emitter small signal short circuit forward current transfer ratio v ce = - 10 v, i e = - 2.0 ma, f = 100 mhz |h fe | 12 36 collector - base time constant i e = - 2.0 ma, v cb = - 10 .0 v, f = 63.6 mhz r b c c 1.0 8.0 ps collector to base C feedback capacitance i e = 0 ma, v cb = - 10 v, 100 khz < f < 1 mhz c cb 0.8 pf nois e figur e (5 0 ohms) i c = - 2.0 ma, v ce = - 10 v, f = 450 mhz, r l = 50 ? nf 3.5 db small signal power gain (common emitter) i c = - 2.0 ma, v ce = - 10 v, f = 450 mhz g pe 17 25 db downloaded from: http:///
t4 - lds - 0313 -1, rev . 1 ( 10/8/13 ) ?201 3 microsemi corporation page 4 of 4 2n49 57 ub package dimensions symbol dimensions note symbol dimensions note inch millimeters inch millimeters min max min max min max min max bh 0 .046 0 .056 1.17 1.42 ls1 0 .03 6 0 .0 40 0.91 1.02 bl 0 .115 0 .128 2.92 3.25 ls2 0 .071 0 .079 1.80 2.01 bw 0 .085 0 .108 2.16 2.74 lw 0.16 0.24 0.41 0.61 cl - 0 .128 - 3.25 r - 0 .008 - 0.20 cw - 0 .108 - 2.74 r1 - 0 .012 - 0.31 ll1 0 .022 0 .038 0.56 0.97 r2 - 0 .022 - 0 .056 ll2 0 .017 0 .035 0.43 0.89 not es: 1 . dimen sio ns are in in ch es. 2 . m illim ete rs a re gi ven fo r in for ma t io n onl y. 3 . hat che d areas on pack ag e deno te metal li zed area s. 4 . pad 1 = b ase , pad 2 = emi tt e r, pad 3 = c ol l ec to r, pad 4 = s hi e ldi ng c on n ec ted to the li d. 5 . in ac co rd an ce wi th as me y 14 .5m, diame ters a re eq uival en t to x sy mbolog y. downloaded from: http:///
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